RFP10N12L
N-CHANNEL POWER MOSFET
Transistors Fets Mosfets Single
TO-220-3
Active
$1.07 / unit (market reference)
MOQ: 281 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | RFP10N12L |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 120 V |
| Rds On (Max) | 300mOhm @ 5A, 5V |
| Input Capacitance (Ciss) | 1200 pF @ 25 V |
| Power Dissipation (Max) | 60W (Tc) |
| Drive Voltage | 5V |
| Supplier Device Package | TO-220-3 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
RFP10N12L by Rochester Electronics, LLC is an N-channel power MOSFET rated at 120 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 300mOhm @ 5A, 5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for RFP10N12L
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±10V |
| Technology | MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 5A, 5V |
| Power Dissipation (Max) | 60W (Tc) |
| Drain to Source Voltage (Vdss) | 120 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
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