RF4E070GNTR
MOSFET N-CH 30V 7A HUML2020L8
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Transistors Fets Mosfets Single
8-PowerUDFN
Active
$0.54 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rohm Semiconductor |
| Model | RF4E070GNTR |
| Package / Case | 8-PowerUDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Rds On (Max) | 21.4mOhm @ 7A, 10V |
| Vgs(th) (Max) | 2.5V @ 250µA |
| Gate Charge (Qg) | 4.8 nC @ 10 V |
| Input Capacitance (Ciss) | 220 pF @ 15 V |
| Power Dissipation (Max) | 2W (Ta) |
| Drive Voltage | 4.5V, 10V |
| Supplier Device Package | HUML2020L8 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
RF4E070GNTR by Rohm Semiconductor is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerUDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 21.4mOhm @ 7A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for RF4E070GNTR
Alternatives & Replacements
View All →DMG4468LFG-7
MOSFET N-CH 30V 7.62A 8DFN
DMG4800LFG-7
MOSFET N-CH 30V 7.44A 8DFN
RF4E060AJTCR
MOSFET N-CH 30V 6A HUML2020L8
DMG4468LFG
MOSFET N-CH 30V 7.62A 8DFN
RF4E110GNTR
MOSFET N-CH 30V 11A HUML2020L8
RF4L055GNTCR
MOSFET N-CH 60V 5.5A HUML2020L8
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 21.4mOhm @ 7A, 10V |
| Power Dissipation (Max) | 2W (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 4.8 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 220 pF @ 15 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
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