RBA250N10CHPF-4UA02
MP-25LZU
Transistors Fets Mosfets Single
TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Renesas Electronics America Inc |
| Model | RBA250N10CHPF-4UA02 |
| Package / Case | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 100 V |
| Rds On (Max) | 2.4mOhm @ 125A, 10V |
| Vgs(th) (Max) | 3.8V @ 250µA |
| Gate Charge (Qg) | 190 nC @ 10 V |
| Input Capacitance (Ciss) | 9500 pF @ 50 V |
| Power Dissipation (Max) | 1.8W (Ta), 348W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | TO-263-7 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
RBA250N10CHPF-4UA02 by Renesas Electronics America Inc is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-7, D²Pak (6 Leads + Tab), TO-263CB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 2.4mOhm @ 125A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for RBA250N10CHPF-4UA02
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3.8V @ 250µA |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 125A, 10V |
| Power Dissipation (Max) | 1.8W (Ta), 348W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 190 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9500 pF @ 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 250A (Ta) |
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