PQMD3Z
TRANS PREBIAS NPN/PNP 50V 6DFN
Transistors Bipolar Bjt Arrays Pre Biased
6-XFDFN Exposed Pad
Automotive, AEC-Q101
Active
Price available on request
MOQ: 5000 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Nexperia USA Inc. |
| Model | PQMD3Z |
| Package / Case | 6-XFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Power Dissipation (Max) | 230mW |
| Supplier Device Package | DFN1010B-6 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
PQMD3Z by Nexperia USA Inc. is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-XFDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for PQMD3Z
Alternatives & Replacements
View All →PQMD12Z
NOW NEXPERIA PQMD - SMALL SIGNAL
PRMH10Z
TRANS PREBIAS 2NPN 50V DFN1412-6
PRMD3Z
TRANS PREBIAS NPN/PNP 50V 6DFN
PRMH11Z
PRMH11/SOT1268/DFN1412-6
PRMD12Z
PRMD12/SOT1268/DFN1412-6
PRMD16Z
PRMD16/SOT1268/DFN1412-6
All Technical Specifications
| Power - Max | 230mW |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Resistor - Base (R1) | 10kOhms |
| Frequency - Transition | 230MHz, 180MHz |
| Resistor - Emitter Base (R2) | 10kOhms |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector (Ic) (Max) | 100mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
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