PC
Rochester Electronics, LLCSC-101, SOT-883RoHS

PMZB420UN,315

MOSFET N-CH 30V 900MA DFN1006B-3

PMZB420UN,315 by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

SC-101, SOT-883

Status

Obsolete

$0.09 / unit (market reference)

MOQ: 3206 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelPMZB420UN,315
Package / CaseSC-101, SOT-883
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)30 V
Rds On (Max)490mOhm @ 200mA, 4.5V
Vgs(th) (Max)950mV @ 250µA
Gate Charge (Qg)0.98 nC @ 4.5 V
Input Capacitance (Ciss)65 pF @ 25 V
Power Dissipation (Max)360mW (Ta), 2.7W (Tc)
Drive Voltage1.8V, 4.5V
Supplier Device PackageDFN1006B-3
RoHSRoHS
Part StatusObsolete

Application & Notes

PMZB420UN,315 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SC-101, SOT-883 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 490mOhm @ 200mA, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±8V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id950mV @ 250µA
Rds On (Max) @ Id, Vgs490mOhm @ 200mA, 4.5V
Power Dissipation (Max)360mW (Ta), 2.7W (Tc)
Gate Charge (Qg) (Max) @ Vgs0.98 nC @ 4.5 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds65 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C900mA (Ta)

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