PMWD30UN,518
MOSFET 2N-CH 30V 5A 8TSSOP
Transistors Fets Mosfets Arrays
8-TSSOP (0.173", 4.40mm Width)
TrenchMOS™
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | NXP USA Inc. |
| Model | PMWD30UN,518 |
| Package / Case | 8-TSSOP (0.173", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) | 33mOhm @ 3.5A, 4.5V |
| Vgs(th) (Max) | 700mV @ 1mA |
| Gate Charge (Qg) | 28nC @ 5V |
| Input Capacitance (Ciss) | 1478pF @ 10V |
| Power Dissipation (Max) | 2.3W |
| Supplier Device Package | 8-TSSOP |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
PMWD30UN,518 by NXP USA Inc. is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-TSSOP (0.173", 4.40mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 33mOhm @ 3.5A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for PMWD30UN,518
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Power - Max | 2.3W |
| Vgs(th) (Max) @ Id | 700mV @ 1mA |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 3.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 28nC @ 5V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1478pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 5A |
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