PartsCube Global

Nexperia USA Inc.TO-236-3, SC-59, SOT-23-3RoHS

PMV40UN2R

MOSFET N-CH 30V 3.7A TO236AB

PMV40UN2R by Nexperia USA Inc.
Subcategory

Transistors Fets Mosfets Single

Package

TO-236-3, SC-59, SOT-23-3

Status

Active

Price available on request

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

✅ 365-Day Warranty🚚 Global Shipping

Parameters

ParameterValue
BrandNexperia USA Inc.
ModelPMV40UN2R
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)30 V
Rds On (Max)44mOhm @ 3.7A, 4.5V
Vgs(th) (Max)900mV @ 250µA
Gate Charge (Qg)12 nC @ 4.5 V
Input Capacitance (Ciss)635 pF @ 15 V
Power Dissipation (Max)490mW (Ta)
Drive Voltage1.8V, 4.5V
Supplier Device PackageTO-236AB
RoHSRoHS
Part StatusActive

Application & Notes

PMV40UN2R by Nexperia USA Inc. is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 44mOhm @ 3.7A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±12V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id900mV @ 250µA
Rds On (Max) @ Id, Vgs44mOhm @ 3.7A, 4.5V
Power Dissipation (Max)490mW (Ta)
Gate Charge (Qg) (Max) @ Vgs12 nC @ 4.5 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds635 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C3.7A (Ta)

Request a Quote

Submit your quantity and details — we will reply within 24 hours.