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NXP USA Inc.TO-236-3, SC-59, SOT-23-3RoHS

PMV117EN,215

MOSFET N-CH 30V 2.5A TO236AB

PMV117EN,215 by NXP USA Inc.
Subcategory

Transistors Fets Mosfets Single

Package

TO-236-3, SC-59, SOT-23-3

Series

TrenchMOS™

Status

Obsolete

Price available on request

MOQ: 3206 pcs

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Parameters

ParameterValue
BrandNXP USA Inc.
ModelPMV117EN,215
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-65°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)30 V
Rds On (Max)117mOhm @ 500mA, 10V
Vgs(th) (Max)2V @ 1mA
Gate Charge (Qg)4.6 nC @ 10 V
Input Capacitance (Ciss)147 pF @ 10 V
Power Dissipation (Max)830mW (Tc)
Drive Voltage4.5V, 10V
Supplier Device PackageSOT-23 (TO-236AB)
RoHSRoHS
Part StatusObsolete

Application & Notes

PMV117EN,215 by NXP USA Inc. is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 117mOhm @ 500mA, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 1mA
Rds On (Max) @ Id, Vgs117mOhm @ 500mA, 10V
Power Dissipation (Max)830mW (Tc)
Gate Charge (Qg) (Max) @ Vgs4.6 nC @ 10 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds147 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C2.5A (Tc)

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