PartsCube Global

NXP USA Inc.SC-74, SOT-457RoHS

PMN35EN,115

MOSFET N-CH 30V 5.1A 6TSOP

PMN35EN,115 by NXP USA Inc.
Subcategory

Transistors Fets Mosfets Single

Package

SC-74, SOT-457

Status

Obsolete

Price available on request

MOQ: 4007 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

✅ 365-Day Warranty🚚 Global Shipping

Parameters

ParameterValue
BrandNXP USA Inc.
ModelPMN35EN,115
Package / CaseSC-74, SOT-457
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)30 V
Rds On (Max)31mOhm @ 5.1A, 10V
Vgs(th) (Max)2.5V @ 250µA
Gate Charge (Qg)9.3 nC @ 10 V
Input Capacitance (Ciss)334 pF @ 15 V
Power Dissipation (Max)500mW (Ta)
Drive Voltage4.5V, 10V
Supplier Device PackageSC-74
RoHSRoHS
Part StatusObsolete

Application & Notes

PMN35EN,115 by NXP USA Inc. is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SC-74, SOT-457 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 31mOhm @ 5.1A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA
Rds On (Max) @ Id, Vgs31mOhm @ 5.1A, 10V
Power Dissipation (Max)500mW (Ta)
Gate Charge (Qg) (Max) @ Vgs9.3 nC @ 10 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds334 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C5.1A (Ta)

Request a Quote

Submit your quantity and details — we will reply within 24 hours.