PC
Nexperia USA Inc.8-SOIC (0.154", 3.90mm Width)RoHS

PMK50XP,518

MOSFET P-CH 20V 7.9A 8SO

PMK50XP,518 by Nexperia USA Inc.
Subcategory

Transistors Fets Mosfets Single

Package

8-SOIC (0.154", 3.90mm Width)

Series

TrenchMOS™

Status

Obsolete

$0.10 / unit (market reference)

MOQ: 2500 pcs

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Parameters

ParameterValue
BrandNexperia USA Inc.
ModelPMK50XP,518
Package / Case8-SOIC (0.154", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeP-Channel
Drain to Source Voltage (Vdss)20 V
Rds On (Max)50mOhm @ 2.8A, 4.5V
Vgs(th) (Max)950mV @ 250µA
Gate Charge (Qg)10 nC @ 4.5 V
Input Capacitance (Ciss)1020 pF @ 20 V
Power Dissipation (Max)5W (Tc)
Drive Voltage4.5V
Supplier Device Package8-SO
RoHSRoHS
Part StatusObsolete

Application & Notes

PMK50XP,518 by Nexperia USA Inc. is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SOIC (0.154", 3.90mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 50mOhm @ 2.8A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeP-Channel
Vgs (Max)±12V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id950mV @ 250µA
Rds On (Max) @ Id, Vgs50mOhm @ 2.8A, 4.5V
Power Dissipation (Max)5W (Tc)
Gate Charge (Qg) (Max) @ Vgs10 nC @ 4.5 V
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds1020 pF @ 20 V
Drive Voltage (Max Rds On, Min Rds On)4.5V
Current - Continuous Drain (Id) @ 25°C7.9A (Tc)

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