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NXP USA Inc.6-TSSOP, SC-88, SOT-363RoHS

PMGD8000LN,115

MOSFET 2N-CH 30V 0.125A 6TSSOP

PMGD8000LN,115 by NXP USA Inc.
Subcategory

Transistors Fets Mosfets Arrays

Package

6-TSSOP, SC-88, SOT-363

Series

TrenchMOS™

Status

Obsolete

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandNXP USA Inc.
ModelPMGD8000LN,115
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET Type2 N-Channel (Dual)
Drain to Source Voltage (Vdss)30V
Rds On (Max)8Ohm @ 10mA, 4V
Vgs(th) (Max)1.5V @ 100µA
Gate Charge (Qg)0.35nC @ 4.5V
Input Capacitance (Ciss)18.5pF @ 5V
Power Dissipation (Max)200mW
Supplier Device Package6-TSSOP
RoHSRoHS
Part StatusObsolete

Application & Notes

PMGD8000LN,115 by NXP USA Inc. is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-TSSOP, SC-88, SOT-363 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 8Ohm @ 10mA, 4V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Power - Max200mW
Vgs(th) (Max) @ Id1.5V @ 100µA
Rds On (Max) @ Id, Vgs8Ohm @ 10mA, 4V
Gate Charge (Qg) (Max) @ Vgs0.35nC @ 4.5V
Drain to Source Voltage (Vdss)30V
Input Capacitance (Ciss) (Max) @ Vds18.5pF @ 5V
Current - Continuous Drain (Id) @ 25°C125mA

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