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NXP USA Inc.SC-70, SOT-323RoHS

PMF3800SN,115

MOSFET N-CH 60V 260MA SOT323-3

PMF3800SN,115 by NXP USA Inc.
Subcategory

Transistors Fets Mosfets Single

Package

SC-70, SOT-323

Series

TrenchMOS™

Status

Obsolete

Price available on request

MOQ: 4808 pcs

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Parameters

ParameterValue
BrandNXP USA Inc.
ModelPMF3800SN,115
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)60 V
Rds On (Max)4.5Ohm @ 500mA, 10V
Vgs(th) (Max)3.3V @ 1mA
Gate Charge (Qg)0.85 nC @ 10 V
Input Capacitance (Ciss)40 pF @ 10 V
Power Dissipation (Max)560mW (Tc)
Drive Voltage4.5V, 10V
Supplier Device PackageSC-70
RoHSRoHS
Part StatusObsolete

Application & Notes

PMF3800SN,115 by NXP USA Inc. is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SC-70, SOT-323 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 4.5Ohm @ 500mA, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±15V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3.3V @ 1mA
Rds On (Max) @ Id, Vgs4.5Ohm @ 500mA, 10V
Power Dissipation (Max)560mW (Tc)
Gate Charge (Qg) (Max) @ Vgs0.85 nC @ 10 V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds40 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C260mA (Ta)

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