PMCM6501UNEZ
MOSFET N-CH 20V 8.7A 6WLCSP
Transistors Fets Mosfets Single
6-XFBGA, WLCSP
Active
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MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Nexperia USA Inc. |
| Model | PMCM6501UNEZ |
| Package / Case | 6-XFBGA, WLCSP |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 20 V |
| Rds On (Max) | 21mOhm @ 3A, 4.5V |
| Vgs(th) (Max) | 0.9V @ 250µA |
| Gate Charge (Qg) | 6.2 nC @ 4.5 V |
| Input Capacitance (Ciss) | 105 pF @ 10 V |
| Power Dissipation (Max) | 400mW |
| Drive Voltage | 1.5V, 4.5V |
| Supplier Device Package | 6-WLCSP (1.48x0.98) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
PMCM6501UNEZ by Nexperia USA Inc. is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-XFBGA, WLCSP package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 21mOhm @ 3A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for PMCM6501UNEZ
Alternatives & Replacements
View All →PMCM650VNEZ
MOSFET N-CH 12V 6.4A 6WLCSP
PMCM6501VPEZ
MOSFET P-CH 12V 6.2A 6WLCSP
PMCM6501UPEZ
MOSFET P-CH 20V 6WLCSP
PMCM6501VNEZ
MOSFET N-CH 12V 7.3A 6WLCSP
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 0.9V @ 250µA |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 3A, 4.5V |
| Power Dissipation (Max) | 400mW |
| Gate Charge (Qg) (Max) @ Vgs | 6.2 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 105 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 8.7A (Ta) |
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