PMBFJ112,215
JFET N-CH 40V 0.3W SOT23
Transistors Jfets
TO-236-3, SC-59, SOT-23-3
Obsolete
Price available on request
MOQ: 285 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | NXP USA Inc. |
| Model | PMBFJ112,215 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 40 V |
| Input Capacitance (Ciss) | 6pF @ 10V (VGS) |
| Power Dissipation (Max) | 300 mW |
| Supplier Device Package | SOT-23 (TO-236AB) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
PMBFJ112,215 by NXP USA Inc. is an N-channel power MOSFET rated at 40 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for PMBFJ112,215
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All Technical Specifications
| FET Type | N-Channel |
| Power - Max | 300 mW |
| Resistance - RDS(On) | 50 Ohms |
| Drain to Source Voltage (Vdss) | 40 V |
| Voltage - Breakdown (V(BR)GSS) | 40 V |
| Voltage - Cutoff (VGS off) @ Id | 5 V @ 1 µA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 5 mA @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6pF @ 10V (VGS) |
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