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NXP USA Inc.TO-251-3 Short Leads, IPak, TO-251AARoHS

PHU101NQ03LT,127

MOSFET N-CH 30V 75A IPAK

PHU101NQ03LT,127 by NXP USA Inc.
Subcategory

Transistors Fets Mosfets Single

Package

TO-251-3 Short Leads, IPak, TO-251AA

Series

TrenchMOS™

Status

Obsolete

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandNXP USA Inc.
ModelPHU101NQ03LT,127
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)30 V
Rds On (Max)5.5mOhm @ 25A, 10V
Vgs(th) (Max)2.5V @ 1mA
Gate Charge (Qg)23 nC @ 5 V
Input Capacitance (Ciss)2180 pF @ 25 V
Power Dissipation (Max)166W (Tc)
Drive Voltage5V, 10V
Supplier Device PackageI-Pak
RoHSRoHS
Part StatusObsolete

Application & Notes

PHU101NQ03LT,127 by NXP USA Inc. is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-251-3 Short Leads, IPak, TO-251AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 5.5mOhm @ 25A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 1mA
Rds On (Max) @ Id, Vgs5.5mOhm @ 25A, 10V
Power Dissipation (Max)166W (Tc)
Gate Charge (Qg) (Max) @ Vgs23 nC @ 5 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds2180 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Current - Continuous Drain (Id) @ 25°C75A (Tc)

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