PHN210,118
MOSFET 2N-CH 30V 8SOIC
Transistors Fets Mosfets Arrays
8-SOIC (0.154", 3.90mm Width)
TrenchMOS™
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | NXP USA Inc. |
| Model | PHN210,118 |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) | 100mOhm @ 2.2A, 10V |
| Vgs(th) (Max) | 2.8V @ 1mA |
| Gate Charge (Qg) | 6nC @ 10V |
| Input Capacitance (Ciss) | 250pF @ 20V |
| Power Dissipation (Max) | 2W |
| Supplier Device Package | 8-SO |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
PHN210,118 by NXP USA Inc. is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SOIC (0.154", 3.90mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 100mOhm @ 2.2A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for PHN210,118
Alternatives & Replacements
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MOSFET 2N-CH 35V 4.5A 8SOIC
All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Power - Max | 2W |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2.2A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 20V |
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