PHK4NQ10T,518
MOSFET N-CH 100V 8SO
Transistors Fets Mosfets Single
8-SOIC (0.154", 3.90mm Width)
TrenchMOS™
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | NXP USA Inc. |
| Model | PHK4NQ10T,518 |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 100 V |
| Rds On (Max) | 70mOhm @ 4A, 10V |
| Vgs(th) (Max) | 4V @ 1mA |
| Gate Charge (Qg) | 22 nC @ 10 V |
| Input Capacitance (Ciss) | 880 pF @ 25 V |
| Power Dissipation (Max) | 2.5W (Ta) |
| Drive Voltage | 4.5V, 10V |
| Supplier Device Package | 8-SO |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
PHK4NQ10T,518 by NXP USA Inc. is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SOIC (0.154", 3.90mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 70mOhm @ 4A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for PHK4NQ10T,518
Alternatives & Replacements
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 4A, 10V |
| Power Dissipation (Max) | 2.5W (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 880 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
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