PHD108NQ03LT,118
MOSFET N-CH 25V 75A DPAK
Transistors Fets Mosfets Single
TO-252-3, DPak (2 Leads + Tab), SC-63
TrenchMOS™
Obsolete
Price available on request
MOQ: 1190 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | NXP USA Inc. |
| Model | PHD108NQ03LT,118 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 25 V |
| Rds On (Max) | 6mOhm @ 25A, 10V |
| Vgs(th) (Max) | 2V @ 1mA |
| Gate Charge (Qg) | 16.3 nC @ 4.5 V |
| Input Capacitance (Ciss) | 1375 pF @ 12 V |
| Power Dissipation (Max) | 187W (Tc) |
| Drive Voltage | 5V, 10V |
| Supplier Device Package | DPAK |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
PHD108NQ03LT,118 by NXP USA Inc. is an N-channel power MOSFET rated at 25 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-3, DPak (2 Leads + Tab), SC-63 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 6mOhm @ 25A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for PHD108NQ03LT,118
Alternatives & Replacements
View All →SFT1423-S-TL-E
MOSFET N-CH 500V 2A TP-FA
NTD23N03RT4G
MOSFET N-CH 25V 3.8A/17.1A DPAK
FDD8780
POWER FIELD-EFFECT TRANSISTOR, 3
NTD4815NHT4G
MOSFET N-CH 30V 6.9A/35A DPAK
NTD70N03RT4G
MOSFET N-CH 25V 10A/32A DPAK
FDD8451
POWER FIELD-EFFECT TRANSISTOR, 9
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 25A, 10V |
| Power Dissipation (Max) | 187W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 16.3 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 25 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1375 pF @ 12 V |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
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