PD20010-E
TRANS RF N-CH FET POWERSO-10RF
Transistors Fets Mosfets Rf
PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | STMicroelectronics |
| Model | PD20010-E |
| Package / Case | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) |
| Supplier Device Package | PowerSO-10RF (Formed Lead) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
PD20010-E by STMicroelectronics is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for PD20010-E
Alternatives & Replacements
View All →PD57018TR-E
TRANSISTOR RF POWERSO-10
PD55008TR-E
TRANSISTOR RF POWERSO-10
PD57070-E
FET RF 65V 945MHZ PWRSO-10
PD55025TR-E
TRANS RF N-CH FET POWERSO-10RF
All Technical Specifications
| Gain | 11dB |
| Frequency | 2GHz |
| Current - Test | 150 mA |
| Power - Output | 10W |
| Voltage - Test | 13.6 V |
| Transistor Type | LDMOS |
| Voltage - Rated | 40 V |
| Current Rating (Amps) | 5A |
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