PBSS8110Y,115
NEXPERIA PBSS8110Y - SMALL SIGNA
Transistors Bipolar Bjt Single
6-TSSOP, SC-88, SOT-363
Active
Price available on request
MOQ: 6299 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | PBSS8110Y,115 |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 625 mW |
| Supplier Device Package | 6-TSSOP |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
PBSS8110Y,115 by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-TSSOP, SC-88, SOT-363 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for PBSS8110Y,115
Alternatives & Replacements
View All →SBC847BWT1G
TRANS NPN 45V 100MA SC88/SC70-6
NSL12AWT1G
TRANS PNP 12V 2A SC88/SC70-6
BC846BW/ZLF
NEXPERIA BC846 - 65V, 100MA NPN
FHR1200
TRANS NPN Z DIODE 100V 50MA SC88
BC847BW/ZLF
TRANS NPN 45V 0.1A SOT323
NSL12AWT1
TRANS PNP 12V 2A SOT363
All Technical Specifications
| Power - Max | 625 mW |
| Transistor Type | NPN |
| Frequency - Transition | 100MHz |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 100mA, 1A |
| Current - Collector (Ic) (Max) | 1 A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 250mA, 10V |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
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