PBSS4260PANP,115
TRANS NPN/PNP 60V 2A 6HUSON
Transistors Bipolar Bjt Arrays
6-UFDFN Exposed Pad
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Nexperia USA Inc. |
| Model | PBSS4260PANP,115 |
| Package / Case | 6-UFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 510mW |
| Supplier Device Package | 6-HUSON (2x2) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
PBSS4260PANP,115 by Nexperia USA Inc. is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-UFDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for PBSS4260PANP,115
Alternatives & Replacements
View All →PBSS4160PAN,115
NOW NEXPERIA PBSS4160PAN - SMALL
PBSS4112PANP,115
TRANS NPN/PNP 120V 1A 6HUSON
PBSS4230PANP,115
NOW NEXPERIA PBSS4230PANP - SMAL
PBSS4260PAN,115
TRANS 2NPN 60V 2A 6HUSON
PBSS4130PAN,115
TRANS 2NPN 30V 1A 6HUSON
PBSS5260PAP,115
TRANS 2PNP 60V 2A 6HUSON
All Technical Specifications
| Power - Max | 510mW |
| Transistor Type | NPN, PNP |
| Frequency - Transition | 140MHz |
| Vce Saturation (Max) @ Ib, Ic | 90mV @ 50mA, 500mA |
| Current - Collector (Ic) (Max) | 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1A, 2V |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
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