PBRN113ES,126
TRANS PREBIAS NPN 0.7W TO92-3
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Transistors Bipolar Bjt Single Pre Biased
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | NXP USA Inc. |
| Model | PBRN113ES,126 |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Power Dissipation (Max) | 700 mW |
| Supplier Device Package | TO-92-3 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
PBRN113ES,126 by NXP USA Inc. is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-226-3, TO-92-3 (TO-226AA) Formed Leads package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for PBRN113ES,126
Alternatives & Replacements
View All →FJN3310RTA
SMALL SIGNAL BIPOLAR TRANSISTOR
FJN3309RTA
SMALL SIGNAL BIPOLAR TRANSISTOR
FJN3306RTA
SMALL SIGNAL BIPOLAR TRANSISTOR
All Technical Specifications
| Power - Max | 700 mW |
| Transistor Type | NPN - Pre-Biased |
| Resistor - Base (R1) | 1 kOhms |
| Resistor - Emitter Base (R2) | 1 kOhms |
| Vce Saturation (Max) @ Ib, Ic | 1.15V @ 8mA, 800mA |
| Current - Collector (Ic) (Max) | 800 mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 300mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
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