PBLS2002S,115
TRANS NPN PREBIAS/PNP 1.5W 8SO

Transistors Bipolar Bjt Arrays Pre Biased
8-SOIC (0.154", 3.90mm Width)
Obsolete
Price available on request
MOQ: 3258 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | NXP USA Inc. |
| Model | PBLS2002S,115 |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Power Dissipation (Max) | 1.5W |
| Supplier Device Package | 8-SO |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
PBLS2002S,115 by NXP USA Inc. is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SOIC (0.154", 3.90mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for PBLS2002S,115
Alternatives & Replacements
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All Technical Specifications
| Power - Max | 1.5W |
| Transistor Type | 1 NPN Pre-Biased, 1 PNP |
| Resistor - Base (R1) | 4.7kOhms |
| Frequency - Transition | 100MHz |
| Resistor - Emitter Base (R2) | 4.7kOhms |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA / 355mV @ 300mA, 3A |
| Current - Collector (Ic) (Max) | 100mA, 3A |
| Current - Collector Cutoff (Max) | 1µA, 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V / 150 @ 2A, 2V |
| Voltage - Collector Emitter Breakdown (Max) | 50V, 20V |
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