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NXP USA Inc.8-SOIC (0.154", 3.90mm Width)RoHS

PBLS2002S,115

TRANS NPN PREBIAS/PNP 1.5W 8SO

PBLS2002S,115 by NXP USA Inc.
Subcategory

Transistors Bipolar Bjt Arrays Pre Biased

Package

8-SOIC (0.154", 3.90mm Width)

Status

Obsolete

Price available on request

MOQ: 3258 pcs

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Parameters

ParameterValue
BrandNXP USA Inc.
ModelPBLS2002S,115
Package / Case8-SOIC (0.154", 3.90mm Width)
Mounting TypeSurface Mount
Power Dissipation (Max)1.5W
Supplier Device Package8-SO
RoHSRoHS
Part StatusObsolete

Application & Notes

PBLS2002S,115 by NXP USA Inc. is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SOIC (0.154", 3.90mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

Power - Max1.5W
Transistor Type1 NPN Pre-Biased, 1 PNP
Resistor - Base (R1)4.7kOhms
Frequency - Transition100MHz
Resistor - Emitter Base (R2)4.7kOhms
Vce Saturation (Max) @ Ib, Ic150mV @ 500µA, 10mA / 355mV @ 300mA, 3A
Current - Collector (Ic) (Max)100mA, 3A
Current - Collector Cutoff (Max)1µA, 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 10mA, 5V / 150 @ 2A, 2V
Voltage - Collector Emitter Breakdown (Max)50V, 20V

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