PBHV8115T,215
NEXPERIA PBHV8115T - 150 V, 1 A
Transistors Bipolar Bjt Single
TO-236-3, SC-59, SOT-23-3
Active
Price available on request
MOQ: 3761 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | PBHV8115T,215 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 300 mW |
| Supplier Device Package | TO-236AB |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
PBHV8115T,215 by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for PBHV8115T,215
Alternatives & Replacements
View All →BC847BLT1G
TRANS NPN 45V 100MA SOT23-3
2SC2812N6-CPA-TB-E
TRANS NPN 50V 0.15A CP
MMBT5401
Transistor SOT-23 PNP 160V0.6A
BC859B,215
NEXPERIA BC859B - SMALL SIGNAL B
2SA1179N6-CPA-TB-E
TRANS PNP 50V 0.15A CP
BC847C
TRANS NPN 45V 100A SOT23-3
All Technical Specifications
| Power - Max | 300 mW |
| Transistor Type | NPN |
| Frequency - Transition | 30MHz |
| Vce Saturation (Max) @ Ib, Ic | 350mV @ 200mA, 1A |
| Current - Collector (Ic) (Max) | 1 A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 500mA, 10V |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
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