NTTFD4D0N04HLTWG
MOSFET, POWER, 40V POWERTRENCH P
Transistors Fets Mosfets Arrays
12-PowerWQFN
Active
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MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | onsemi |
| Model | NTTFD4D0N04HLTWG |
| Package / Case | 12-PowerWQFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 40V |
| Rds On (Max) | 4.5mOhm @ 10A, 10V |
| Vgs(th) (Max) | 2V @ 50µA |
| Gate Charge (Qg) | 18nC @ 10V |
| Input Capacitance (Ciss) | 1100pF @ 20V |
| Power Dissipation (Max) | 1.7W (Ta), 26W (Tc) |
| Supplier Device Package | 12-WQFN (3.3x3.3) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
NTTFD4D0N04HLTWG by onsemi is an N-channel power MOSFET rated at 40V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 12-PowerWQFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 4.5mOhm @ 10A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for NTTFD4D0N04HLTWG
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Power - Max | 1.7W (Ta), 26W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 50µA |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 10A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
| Drain to Source Voltage (Vdss) | 40V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 20V |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta), 60A (Tc) |
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