PartsCube Global

onsemi8-PowerTDFNRoHS

NTMTS0D7N04CTXG

MOSFET N-CH 40V 65A/420A 8DFNW

NTMTS0D7N04CTXG by onsemi
Subcategory

Transistors Fets Mosfets Single

Package

8-PowerTDFN

Status

Active

Price available on request

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

✅ 365-Day Warranty🚚 Global Shipping

Parameters

ParameterValue
Brandonsemi
ModelNTMTS0D7N04CTXG
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)40 V
Rds On (Max)0.67mOhm @ 50A, 10V
Vgs(th) (Max)4V @ 250µA
Gate Charge (Qg)140 nC @ 10 V
Input Capacitance (Ciss)9230 pF @ 25 V
Power Dissipation (Max)4.9W (Ta), 205W (Tc)
Drive Voltage10V
Supplier Device Package8-DFNW (8.3x8.4)
RoHSRoHS
Part StatusActive

Application & Notes

NTMTS0D7N04CTXG by onsemi is an N-channel power MOSFET rated at 40 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerTDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 0.67mOhm @ 50A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA
Rds On (Max) @ Id, Vgs0.67mOhm @ 50A, 10V
Power Dissipation (Max)4.9W (Ta), 205W (Tc)
Gate Charge (Qg) (Max) @ Vgs140 nC @ 10 V
Drain to Source Voltage (Vdss)40 V
Input Capacitance (Ciss) (Max) @ Vds9230 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C65A (Ta), 420A (Tc)

Request a Quote

Submit your quantity and details — we will reply within 24 hours.