PC
onsemi6-WDFN Exposed PadRoHS

NTLJS1102PTAG

MOSFET P-CH 8V 3.7A 6WDFN

NTLJS1102PTAG by onsemi
Subcategory

Transistors Fets Mosfets Single

Package

6-WDFN Exposed Pad

Status

Obsolete

$0.19 / unit (market reference)

MOQ: 1603 pcs

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Parameters

ParameterValue
Brandonsemi
ModelNTLJS1102PTAG
Package / Case6-WDFN Exposed Pad
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeP-Channel
Drain to Source Voltage (Vdss)8 V
Rds On (Max)36mOhm @ 6.2A, 4.5V
Vgs(th) (Max)720mV @ 250µA
Gate Charge (Qg)25 nC @ 4.5 V
Input Capacitance (Ciss)1585 pF @ 4 V
Power Dissipation (Max)700mW (Ta)
Drive Voltage1.2V, 4.5V
Supplier Device Package6-WDFN (2x2)
RoHSRoHS
Part StatusObsolete

Application & Notes

NTLJS1102PTAG by onsemi is an N-channel power MOSFET rated at 8 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-WDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 36mOhm @ 6.2A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeP-Channel
Vgs (Max)±6V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id720mV @ 250µA
Rds On (Max) @ Id, Vgs36mOhm @ 6.2A, 4.5V
Power Dissipation (Max)700mW (Ta)
Gate Charge (Qg) (Max) @ Vgs25 nC @ 4.5 V
Drain to Source Voltage (Vdss)8 V
Input Capacitance (Ciss) (Max) @ Vds1585 pF @ 4 V
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C3.7A (Ta)

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