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Rochester Electronics, LLCTO-247-3RoHS

NTHL080N120SC1

SILICON CARBIDE MOSFET, N-CHANNE

NTHL080N120SC1 by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

TO-247-3

Status

Active

Price available on request

MOQ: 18 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelNTHL080N120SC1
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)1200 V
Rds On (Max)110mOhm @ 20A, 20V
Vgs(th) (Max)4.3V @ 5mA
Gate Charge (Qg)56 nC @ 20 V
Input Capacitance (Ciss)1670 pF @ 800 V
Power Dissipation (Max)348W (Tc)
Drive Voltage20V
Supplier Device PackageTO-247-3
RoHSRoHS
Part StatusActive

Application & Notes

NTHL080N120SC1 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 1200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 110mOhm @ 20A, 20V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)+25V, -15V
TechnologySiCFET (Silicon Carbide)
Vgs(th) (Max) @ Id4.3V @ 5mA
Rds On (Max) @ Id, Vgs110mOhm @ 20A, 20V
Power Dissipation (Max)348W (Tc)
Gate Charge (Qg) (Max) @ Vgs56 nC @ 20 V
Drain to Source Voltage (Vdss)1200 V
Input Capacitance (Ciss) (Max) @ Vds1670 pF @ 800 V
Drive Voltage (Max Rds On, Min Rds On)20V
Current - Continuous Drain (Id) @ 25°C44A (Tc)

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