NTE3310
IGBT-N-CHAN ENHANCEMENT
Transistors Igbts Single
TO-3P-3, SC-65-3
Active
$12.44 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | NTE Electronics, Inc |
| Model | NTE3310 |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 100 W |
| Supplier Device Package | TO-3P |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
NTE3310 by NTE Electronics, Inc is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-3P-3, SC-65-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for NTE3310
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All Technical Specifications
| Input Type | Standard |
| Power - Max | 100 W |
| Td (on/off) @ 25°C | 400ns/500ns |
| Vce(on) (Max) @ Vge, Ic | 4V @ 15V, 15A |
| Current - Collector (Ic) (Max) | 415 A |
| Current - Collector Pulsed (Icm) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
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