NTE128P
TRANS NPN 80V 1A TO237
Transistors Bipolar Bjt Single
TO-237AA
Active
$3.19 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | NTE Electronics, Inc |
| Model | NTE128P |
| Package / Case | TO-237AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 850 mW |
| Supplier Device Package | TO-237 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
NTE128P by NTE Electronics, Inc is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-237AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for NTE128P
Alternatives & Replacements
View All →CENW92
TRANS PNP 300V 0.5A TO237
CENW42
TRANS NPN 300V 0.5A TO237
2N6724-18 TIN/LEAD
TRANSISTOR-BIPOLAR POWER
2N6730 APP TIN/LEAD
TRANSISTOR-BIPOLAR POWER
2N6714 TIN/LEAD
TRANSISTOR-BIPOLAR POWER
2N6727
TRANS PNP 40V 2A TO237
All Technical Specifications
| Power - Max | 850 mW |
| Transistor Type | NPN |
| Frequency - Transition | 50MHz |
| Current - Collector (Ic) (Max) | 1 A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 350mA, 2V |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
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