NSV12100UW3TCG
LOW VCE(SAT) TRANSISTOR, PNP, 12
Transistors Bipolar Bjt Single
3-WDFN Exposed Pad
Active
Price available on request
MOQ: 984 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | NSV12100UW3TCG |
| Package / Case | 3-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 740 mW |
| Supplier Device Package | 3-WDFN (2x2) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
NSV12100UW3TCG by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 3-WDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for NSV12100UW3TCG
Alternatives & Replacements
View All →NSS40500UW3T2G
TRANS PNP 40V 5A 3-WDFN
NSS20501UW3T2G
TRANS NPN 20V 5A 3WDFN
NSS12100UW3TCG
TRANS PNP 12V 1A 3WDFN
NSS40501UW3T2G
TRANS NPN 40V 5A 3-WDFN
NSS12501UW3T2G
TRANS NPN 12V 5A 3-WDFN
NSS20500UW3T2G
TRANS PNP 20V 5A 3-WDFN
All Technical Specifications
| Power - Max | 740 mW |
| Transistor Type | PNP |
| Frequency - Transition | 200MHz |
| Vce Saturation (Max) @ Ib, Ic | 440mV @ 100mA, 1A |
| Current - Collector (Ic) (Max) | 1 A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA, 2V |
| Voltage - Collector Emitter Breakdown (Max) | 12 V |
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