NSS40200UW6T1G
TRANS PNP 40V 2A 6-WDFN
Transistors Bipolar Bjt Single
6-WDFN Exposed Pad
Active
Price available on request
MOQ: 1045 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | onsemi |
| Model | NSS40200UW6T1G |
| Package / Case | 6-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 875 mW |
| Supplier Device Package | 6-WDFN (2x2) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
NSS40200UW6T1G by onsemi is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-WDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for NSS40200UW6T1G
Alternatives & Replacements
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NSS60201S - SINGLE 60V 2A LOW VC
NSV60200SMTWTBG
NSS60200S - SINGLE 60V 2A LOW VC
NSV40200UW6T1G
NSS40200U - LOW VCE TRANSISTOR,
NSS60200SMTTBG
NSS60200S - SINGLE 60V 2A LOW VC
All Technical Specifications
| Power - Max | 875 mW |
| Transistor Type | PNP |
| Frequency - Transition | 140MHz |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 20mA, 2A |
| Current - Collector (Ic) (Max) | 2 A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 1A, 2V |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
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