NE58219-T1-A
TRANSISTOR BIPOLAR .9GHZ 3-SMINI
Transistors Bipolar Bjt Rf
SC-75, SOT-416
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | CEL |
| Model | NE58219-T1-A |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Power Dissipation (Max) | 100mW |
| Supplier Device Package | 3-SuperMiniMold (19) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
NE58219-T1-A by CEL is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SC-75, SOT-416 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for NE58219-T1-A
Alternatives & Replacements
View All →NE68519-T1-A
SAME AS 2SC5010 NPN SILICON AMPL
NE68119-T1-A
SAME AS 2SC5007 NPN SILICON AMPL
BFR380TE6327
RF BIPOLAR TRANSISTOR
2SC5277A-2-TL-E
RF TRANS NPN 10V 8GHZ SMCP
NE68819-T1-A
NPN SILICON AMPLIFIER AND OSCILL
2SC5231A-8-TL-E
RF TRANS NPN 10V 7GHZ SMCP
All Technical Specifications
| Power - Max | 100mW |
| Transistor Type | NPN |
| Frequency - Transition | 5GHz |
| Current - Collector (Ic) (Max) | 60mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
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