NDH832P
MOSFET P-CH 20V 4.2A SUPERSOT8
Transistors Fets Mosfets Single
8-TSOP (0.130", 3.30mm Width)
Obsolete
Price available on request
MOQ: 875 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | NDH832P |
| Package / Case | 8-TSOP (0.130", 3.30mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 20 V |
| Rds On (Max) | 60mOhm @ 4.2A, 4.5V |
| Vgs(th) (Max) | 1V @ 250µA |
| Gate Charge (Qg) | 30 nC @ 4.5 V |
| Input Capacitance (Ciss) | 1000 pF @ 10 V |
| Power Dissipation (Max) | 1.8W (Ta) |
| Drive Voltage | 2.7V, 4.5V |
| Supplier Device Package | SuperSOT™-8 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
NDH832P by Rochester Electronics, LLC is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-TSOP (0.130", 3.30mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 60mOhm @ 4.2A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for NDH832P
Alternatives & Replacements
View All →FDR840P
MOSFET P-CH 20V 10A SUPERSOT8
FDR844P
MOSFET P-CH 20V 10A SUPERSOT8
DI9435T
MOSFET P-CH 30V 5.3A 8-SOP
All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | -8V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 4.2A, 4.5V |
| Power Dissipation (Max) | 1.8W (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 4.2A (Ta) |
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