PC
Rochester Electronics, LLCTO-251-3 Short Leads, IPak, TO-251AARoHS

NDD60N900U1-1G

MOSFET N-CH 600V 5.7A IPAK

NDD60N900U1-1G by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

TO-251-3 Short Leads, IPak, TO-251AA

Status

Obsolete

$0.59 / unit (market reference)

MOQ: 507 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelNDD60N900U1-1G
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)600 V
Rds On (Max)900mOhm @ 2.5A, 10V
Vgs(th) (Max)4V @ 250µA
Gate Charge (Qg)12 nC @ 10 V
Input Capacitance (Ciss)360 pF @ 50 V
Power Dissipation (Max)74W (Tc)
Drive Voltage10V
Supplier Device PackageI-PAK
RoHSRoHS
Part StatusObsolete

Application & Notes

NDD60N900U1-1G by Rochester Electronics, LLC is an N-channel power MOSFET rated at 600 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-251-3 Short Leads, IPak, TO-251AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 900mOhm @ 2.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±25V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA
Rds On (Max) @ Id, Vgs900mOhm @ 2.5A, 10V
Power Dissipation (Max)74W (Tc)
Gate Charge (Qg) (Max) @ Vgs12 nC @ 10 V
Drain to Source Voltage (Vdss)600 V
Input Capacitance (Ciss) (Max) @ Vds360 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C5.7A (Tc)

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