N0607N-ZK-E1-AY
ABU / MOSFET
Transistors Fets Mosfets Single
TO-252-3, DPak (2 Leads + Tab), SC-63
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Renesas Electronics America Inc |
| Model | N0607N-ZK-E1-AY |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 60 V |
| Rds On (Max) | 8.4mOhm @ 32.5A, 10V |
| Vgs(th) (Max) | 4V @ 1mA |
| Gate Charge (Qg) | 58 nC @ 10 V |
| Input Capacitance (Ciss) | 3300 pF @ 25 V |
| Power Dissipation (Max) | 1W (Ta), 87.4W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | TO-252 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
N0607N-ZK-E1-AY by Renesas Electronics America Inc is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-3, DPak (2 Leads + Tab), SC-63 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 8.4mOhm @ 32.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for N0607N-ZK-E1-AY
Alternatives & Replacements
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MOSFET N-CH 25V 10A/32A DPAK
FDD8451
POWER FIELD-EFFECT TRANSISTOR, 9
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Rds On (Max) @ Id, Vgs | 8.4mOhm @ 32.5A, 10V |
| Power Dissipation (Max) | 1W (Ta), 87.4W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3300 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 65A (Ta) |
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