GeneSiC SemiconductorThree TowerRoHS
MURT10060
DIODE ARRAY GP 600V 50A 3TOWER
Category
Subcategory
Diodes Rectifiers Arrays
Package
Three Tower
Status
Active
Datasheet
Price available on request
MOQ: 40 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | GeneSiC Semiconductor |
| Model | MURT10060 |
| Package / Case | Three Tower |
| Mounting Type | Chassis Mount |
| Supplier Device Package | Three Tower |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
MURT10060 by GeneSiC Semiconductor is a commonly used electronic component in the Diodes Rectifiers Arrays category. Available in Three Tower package with standard temperature range operating temperature range. Contact us for datasheet, pricing, and availability.
📖 Technical Guides for MURT10060
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All Technical Specifications
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Type | Standard |
| Diode Configuration | 1 Pair Common Cathode |
| Reverse Recovery Time (trr) | 75 ns |
| Current - Reverse Leakage @ Vr | 25 µA @ 50 V |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 100 A |
| Current - Average Rectified (Io) (per Diode) | 50A |
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