MTI200WX75GD-SMD
IGBT MOD MOSFET SIXPACK ISOPLUS
Transistors Fets Mosfets Arrays
ISOPLUS-DIL™
Active
Price available on request
MOQ: 13 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | IXYS |
| Model | MTI200WX75GD-SMD |
| Package / Case | ISOPLUS-DIL™ |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | 6 N-Channel (3-Phase Bridge) |
| Drain to Source Voltage (Vdss) | 75V |
| Rds On (Max) | 1.3mOhm @ 100A, 10V |
| Vgs(th) (Max) | 3.8V @ 275µA |
| Gate Charge (Qg) | 155nC @ 10V |
| Input Capacitance (Ciss) | 14400pF @ 38V |
| Supplier Device Package | ISOPLUS-DIL™ |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
MTI200WX75GD-SMD by IXYS is an N-channel power MOSFET rated at 75V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The ISOPLUS-DIL™ package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1.3mOhm @ 100A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for MTI200WX75GD-SMD
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All Technical Specifications
| FET Type | 6 N-Channel (3-Phase Bridge) |
| FET Feature | Standard |
| Vgs(th) (Max) @ Id | 3.8V @ 275µA |
| Rds On (Max) @ Id, Vgs | 1.3mOhm @ 100A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 155nC @ 10V |
| Drain to Source Voltage (Vdss) | 75V |
| Input Capacitance (Ciss) (Max) @ Vds | 14400pF @ 38V |
| Current - Continuous Drain (Id) @ 25°C | 255A (Tc) |
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