MMIX2F60N50P3
MOSFET N-CH
Transistors Fets Mosfets Arrays
24-SMD Module, 9 Leads
HiPerFET™, Polar3™
Active
Price available on request
MOQ: 20 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | IXYS |
| Model | MMIX2F60N50P3 |
| Package / Case | 24-SMD Module, 9 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 500V |
| Rds On (Max) | 110mOhm @ 30A, 10V |
| Vgs(th) (Max) | 5V @ 4mA |
| Gate Charge (Qg) | 96nC @ 10V |
| Input Capacitance (Ciss) | 6250pF @ 25V |
| Power Dissipation (Max) | 320W |
| Supplier Device Package | 24-SMPD |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
MMIX2F60N50P3 by IXYS is an N-channel power MOSFET rated at 500V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 24-SMD Module, 9 Leads package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 110mOhm @ 30A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for MMIX2F60N50P3
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Power - Max | 320W |
| Vgs(th) (Max) @ Id | 5V @ 4mA |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 30A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 96nC @ 10V |
| Drain to Source Voltage (Vdss) | 500V |
| Input Capacitance (Ciss) (Max) @ Vds | 6250pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
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