MJD253-1G
TRANS PNP 100V 4A IPAK
Transistors Bipolar Bjt Single
TO-251-3 Short Leads, IPak, TO-251AA
Active
$0.76 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | onsemi |
| Model | MJD253-1G |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 1.4 W |
| Supplier Device Package | I-PAK |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
MJD253-1G by onsemi is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-251-3 Short Leads, IPak, TO-251AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for MJD253-1G
Alternatives & Replacements
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2SA1552 - SMALL SIGNAL BIPOLAR T
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2SD1805F-E
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All Technical Specifications
| Power - Max | 1.4 W |
| Transistor Type | PNP |
| Frequency - Transition | 40MHz |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 100mA, 1A |
| Current - Collector (Ic) (Max) | 4 A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 200mA, 1V |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
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