MJD112-1G
TRANS NPN DARL 100V 2A IPAK
Transistors Bipolar Bjt Single
TO-251-3 Short Leads, IPak, TO-251AA
Active
$0.75 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | onsemi |
| Model | MJD112-1G |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 1.75 W |
| Supplier Device Package | I-PAK |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
MJD112-1G by onsemi is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-251-3 Short Leads, IPak, TO-251AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for MJD112-1G
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All Technical Specifications
| Power - Max | 1.75 W |
| Transistor Type | NPN - Darlington |
| Frequency - Transition | 25MHz |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 4A |
| Current - Collector (Ic) (Max) | 2 A |
| Current - Collector Cutoff (Max) | 20µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 2A, 3V |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
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