MG12150D-BA1MM
IGBT MODULE 1200V 210A 1100W D3
Transistors Igbts Modules
Module
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Littelfuse Inc. |
| Model | MG12150D-BA1MM |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 1100 W |
| Supplier Device Package | D3 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
MG12150D-BA1MM by Littelfuse Inc. is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Module package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for MG12150D-BA1MM
Alternatives & Replacements
View All →BSM75GB120DLCHOSA1
IGBT MOD 1200V 170A 690W
FP50R06W2E3B11BOMA1
IGBT MODULE 600V 65A 175W
FS15R06XL4BOMA1
IGBT MODULE 600V 20A 81W
FS225R12KE4BOSA1
IGBT MOD 1200V 320A 1100W
F3L15R12W2H3B27BOMA1
IGBT MOD 1200V 20A 145W
BSM50GB120DLCHOSA1
IGBT MOD 1200V 115A 460W
All Technical Specifications
| Input | Standard |
| Power - Max | 1100 W |
| Configuration | Half Bridge |
| NTC Thermistor | No |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 150A (Typ) |
| Current - Collector (Ic) (Max) | 210 A |
| Input Capacitance (Cies) @ Vce | 11 nF @ 25 V |
| Current - Collector Cutoff (Max) | 1 mA |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
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