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GeneSiC SemiconductorThree TowerRoHS

MBRT200200

DIODE SCHOTTKY 200V 100A 3 TOWER

MBRT200200 by GeneSiC Semiconductor
Subcategory

Diodes Rectifiers Arrays

Package

Three Tower

Status

Active

Price available on request

MOQ: 40 pcs

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Parameters

ParameterValue
BrandGeneSiC Semiconductor
ModelMBRT200200
Package / CaseThree Tower
Mounting TypeChassis Mount
Supplier Device PackageThree Tower
RoHSRoHS
Part StatusActive

Application & Notes

MBRT200200 by GeneSiC Semiconductor is a commonly used electronic component in the Diodes Rectifiers Arrays category. Available in Three Tower package with standard temperature range operating temperature range. Contact us for datasheet, pricing, and availability.

All Technical Specifications

SpeedFast Recovery =< 500ns, > 200mA (Io)
Diode TypeSchottky
Diode Configuration1 Pair Common Cathode
Current - Reverse Leakage @ Vr1 mA @ 200 V
Voltage - DC Reverse (Vr) (Max)200 V
Operating Temperature - Junction-55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If920 mV @ 100 A
Current - Average Rectified (Io) (per Diode)100A

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