LS5912 DIE
WIDEBAND, HIGH GAIN, MONOLITHIC
Transistors Jfets
Die
LS5912
Active
Price available on request
MOQ: 400 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Linear Integrated Systems, Inc. |
| Model | LS5912 DIE |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel |
| Input Capacitance (Ciss) | 5pF @ 10V |
| Power Dissipation (Max) | 500 mW |
| Supplier Device Package | Die |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
LS5912 DIE by Linear Integrated Systems, Inc. is an N-channel power MOSFET rated at - / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Die package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for LS5912 DIE
Alternatives & Replacements
View All →TF222B-B4-TL-E-ON
N CHANNEL SILICON JFET CONDENSER
2SK596S-C
JFET N-CH 0.1W
2SK514-T-A
HIGH FREQUENCY N-CHANNEL JFET
TF410-TL-HX
JFET N-CH 1MA 30MW USFP
TF408-3-TL-H
JFET N-CH 10MA 30MW USFP
2SK508-T1B-A
HIGH FREQUENCY N-CHANNEL JFET
All Technical Specifications
| FET Type | 2 N-Channel |
| Power - Max | 500 mW |
| Voltage - Breakdown (V(BR)GSS) | 25 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5pF @ 10V |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.