KSB601YTU
TRANS PNP DARL 100V 5A TO-220
Transistors Bipolar Bjt Single
TO-220-3
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | onsemi |
| Model | KSB601YTU |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 1.5 W |
| Supplier Device Package | TO-220-3 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
KSB601YTU by onsemi is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for KSB601YTU
Alternatives & Replacements
View All →BD243BTU
POWER BIPOLAR TRANSISTOR, 6A, 80
TIP32CTU
POWER BIPOLAR TRANSISTOR
TIP31BG
TRANS NPN 80V 3A TO220AB
KSC5402DTTU
POWER BIPOLAR TRANSISTOR, 2A, 45
TIP31CTU
POWER BIPOLAR TRANSISTOR
TIP32C
TRANS PNP 100V 3A TO220AB
All Technical Specifications
| Power - Max | 1.5 W |
| Transistor Type | PNP - Darlington |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 3mA, 3A |
| Current - Collector (Ic) (Max) | 5 A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 5000 @ 3A, 2V |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
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