KGF6N05D-400
IC MOSFET N-CH
Transistors Fets Mosfets Arrays
20-UFLGA, CSP
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Renesas Electronics America Inc |
| Model | KGF6N05D-400 |
| Package / Case | 20-UFLGA, CSP |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) Common Source |
| Drain to Source Voltage (Vdss) | 5.5V |
| Rds On (Max) | 3mOhm @ 6A, 4.5V |
| Vgs(th) (Max) | 0.9V @ 250µA |
| Gate Charge (Qg) | 4nC @ 3.5V |
| Input Capacitance (Ciss) | 630pF @ 5.5V |
| Power Dissipation (Max) | 2.5W (Ta) |
| Supplier Device Package | 20-WLCSP (2.48x1.17) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
KGF6N05D-400 by Renesas Electronics America Inc is an N-channel power MOSFET rated at 5.5V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 20-UFLGA, CSP package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 3mOhm @ 6A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for KGF6N05D-400
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) Common Source |
| FET Feature | Standard |
| Power - Max | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 0.9V @ 250µA |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 6A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 4nC @ 3.5V |
| Drain to Source Voltage (Vdss) | 5.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 630pF @ 5.5V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
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