J175,116
JFET P-CH 30V 0.4W TO92
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Transistors Jfets
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | NXP USA Inc. |
| Model | J175,116 |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) | 8pF @ 10V (VGS) |
| Power Dissipation (Max) | 400 mW |
| Supplier Device Package | TO-92-3 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
J175,116 by NXP USA Inc. is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-226-3, TO-92-3 (TO-226AA) Formed Leads package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for J175,116
Alternatives & Replacements
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All Technical Specifications
| FET Type | P-Channel |
| Power - Max | 400 mW |
| Resistance - RDS(On) | 125 Ohms |
| Drain to Source Voltage (Vdss) | 30 V |
| Voltage - Breakdown (V(BR)GSS) | 30 V |
| Voltage - Cutoff (VGS off) @ Id | 3 V @ 10 nA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 7 mA @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8pF @ 10V (VGS) |
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