IXXX110N65B4H1
IGBT 650V 240A 880W PLUS247
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Transistors Igbts Single
TO-247-3
GenX4™, XPT™
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | IXYS |
| Model | IXXX110N65B4H1 |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max) | 880 W |
| Supplier Device Package | PLUS247™-3 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IXXX110N65B4H1 by IXYS is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IXXX110N65B4H1
Alternatives & Replacements
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N-CHANNEL IGBT
All Technical Specifications
| IGBT Type | PT |
| Input Type | Standard |
| Gate Charge | 183 nC |
| Power - Max | 880 W |
| Test Condition | 400V, 55A, 2Ohm, 15V |
| Switching Energy | 2.2mJ (on), 1.05mJ (off) |
| Td (on/off) @ 25°C | 38ns/156ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 110A |
| Reverse Recovery Time (trr) | 100 ns |
| Current - Collector (Ic) (Max) | 240 A |
| Current - Collector Pulsed (Icm) | 630 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
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