IXTY02N120P
MOSFET N-CH 1200V 200MA TO252
Transistors Fets Mosfets Single
TO-252-3, DPak (2 Leads + Tab), SC-63
Polar
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | IXYS |
| Model | IXTY02N120P |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 1200 V |
| Rds On (Max) | 75Ohm @ 500mA, 10V |
| Vgs(th) (Max) | 4V @ 100µA |
| Gate Charge (Qg) | 4.7 nC @ 10 V |
| Input Capacitance (Ciss) | 104 pF @ 25 V |
| Power Dissipation (Max) | 33W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | TO-252AA |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IXTY02N120P by IXYS is an N-channel power MOSFET rated at 1200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-3, DPak (2 Leads + Tab), SC-63 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 75Ohm @ 500mA, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IXTY02N120P
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Rds On (Max) @ Id, Vgs | 75Ohm @ 500mA, 10V |
| Power Dissipation (Max) | 33W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 4.7 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 104 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Tc) |
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