IXTX120P20T
MOSFET P-CH 200V 120A PLUS247-3
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Transistors Fets Mosfets Single
TO-247-3
TrenchP™
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | IXYS |
| Model | IXTX120P20T |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 200 V |
| Rds On (Max) | 30mOhm @ 60A, 10V |
| Vgs(th) (Max) | 4.5V @ 250µA |
| Gate Charge (Qg) | 740 nC @ 10 V |
| Input Capacitance (Ciss) | 73000 pF @ 25 V |
| Supplier Device Package | PLUS247™-3 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IXTX120P20T by IXYS is an N-channel power MOSFET rated at 200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 30mOhm @ 60A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IXTX120P20T
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All Technical Specifications
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 60A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 740 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 73000 pF @ 25 V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
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